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USD 45 /hr
Hire Dr. MRITUNJAY K.
United Kingdom
USD 45 /hr

PhD Semiconductor Device Expert | GaN Power Electronics | Academic Editing & Technical Consulting

Profile Summary
Subject Matter Expertise
Services
Writing Technical Writing, General Proofreading & Editing
Research Scientific and Technical Research, Systematic Literature Review
Consulting Scientific and Technical Consulting
Product Development Product Validation, Concept Development, Reverse Engineering, Device Fabrication
Work Experience

Research Associate

University of Bristol

May 2025 - Present

Research Associate

University of Bristol

May 2025 - Present

Ph.D. student

King Abdullah University of Science and Technology

August 2020 - April 2025

Education

Doctorate

King Abdullah University of Science and Technology

August 2020 - April 2025

Master of Technology

Indian School of Mines (ISM) - India

August 2017 - May 2019

Bachelor of Engineering

Yeshwantrao Chavan College of Engineering, Nagpur University

August 2011 - June 2015

Certifications
Publications
JOURNAL ARTICLE
Mritunjay Kumar, Ganesh Mainali, Dhanu Chettri, Glen Isaac Maciel García, Vishal Khandelwal, Saravanan Yuvaraja, Xiaohang Li (2026). Monolithic β-Ga2O3 Gate Driver Integrated Circuit . Chip.
(2026). Monolithic β-Ga2O3 Gate Driver Integrated Circuit . Chip.
Mritunjay Kumar, Zixian Jiang, Zhiyuan Liu, Tingang Liu, Haicheng Cao, Zuojian Pan, Na Xiao, Chuanju Wang, Kexin Ren, Xiaohang Li (2025). Reverse current suppression of p-GaN diode using SiOx interlayer . Applied Physics Letters.
Mritunjay Kumar, Ganesh Mainali, Dhanu Chettri, Vishal Khandelwal, Glen Isaac Maciel García, Saravanan Yuvaraja, Xiaohang Li (2025). Monolithically Integrated RTL-Based Inverters for Gate Driver IC Using β-Ga₂O₃ MOSFETs . IEEE Transactions on Electron Devices.
Mritunjay Kumar, Ganesh Mainali, Vishal Khandelwal, Saravanan Yuvaraja, Manoj Kumar Rajbhar, Dhanu Chettri, Haicheng Cao, Xiao Tang, Xiaohang Li (2025). NiOx gate oxide for enhanced thermal stability of threshold voltage in GaN MIS-HEMTs up to 400 °C . Applied Physics Letters.
Mritunjay Kumar, Vishal Khandelwal, Dhanu Chettri, Ganesh Mainali, Glen Isaac Maciel García, Zuojian Pan, Xiaohang Li (2025). High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer . Applied Physics Letters.
Mritunjay Kumar, Dhanu Chettri, Ganesh Mainali, Haicheng Cao, Juan Huerta Salcedo, Mingtao Nong, Saravanan Yuvaraja, Xiao Tang, CheHao Liao, Xiaohang Li (2025). Demonstration of aluminum nitride metal oxide semiconductor field effect transistor on sapphire substrate . Journal of Physics D: Applied Physics.
(2025). High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer . Applied Physics Letters.
Mritunjay Kumar, Haicheng Cao, Mingtao Nong, Tingang Liu, Glen I. García, Zhiyuan Liu, Xiao Tang, Biplab Sarkar, Ying Wu, Xiaohang Li (2025). Performance Enhancement of n-Type AlN Schottky Barrier Diodes Using Oxygen-Rich Rapid Thermal Annealing Treatment . IEEE Transactions on Electron Devices.
(2025). Performance Enhancement of n-Type AlN Schottky Barrier Diodes Using Oxygen-Rich Rapid Thermal Annealing Treatment . IEEE Transactions on Electron Devices.
(2025). NiOx gate oxide for enhanced thermal stability of threshold voltage in GaN MIS-HEMTs up to 400 °C . Applied Physics Letters.
(2025). Monolithically Integrated RTL-Based Inverters for Gate Driver IC Using β-Ga2O3 MOSFETs . IEEE Transactions on Electron Devices.
(2025). Reverse current suppression of p-GaN diode using SiOx interlayer . Applied Physics Letters.
Mritunjay Kumar, Dhanu Chettri, Ganesh Mainali, Juan Huerta Salcedo, Vishal Khandelwal, Saravanan Yuvaraja, Xiaohang Li (2024). Demonstration of normally OFF beta-gallium oxide monolithic bidirectional switch for AC switching applications . Applied Physics Letters.
Mritunjay Kumar, Vishal Khandelwal, Saravanan Yuvaraja, Dhanu Chettri, Haicheng Cao, Ganesh Mainali, Xiao Tang, Xiaohang Li (2024). High-temperature operation of Al2O3/Ga2O3 bi-layer gate stack GaN MOS-HEMT up to 450 °C with suppressed gate leakage . Japanese Journal of Applied Physics.
Mritunjay Kumar, Ganesh Mainali, Dhanu Chettri, Vishal Khandelwal, Glen Isaac Maciel García, Zhiyuan Liu, Na Xiao, Jose Manuel Taboada Vasquez, Xiao Tang, Xiaohang Li (2024). Pseudo-source gated beta-gallium oxide MOSFET . Applied Physics Letters.
Mritunjay Kumar, Saravanan Yuvaraja, Hendrik Faber, Na Xiao, Glen Isaac Maciel García, Xiao Tang, Thomas D. Anthopoulos, Xiaohang Li (2024). Three-dimensional integrated metal-oxide transistors . Nature Electronics.
Mritunjay Kumar, Saravanan Yuvaraja, Na Xiao, Manoj Kumar Rajbhar, Ganesh Mainali, Vishal Khandelwal, Xiao Tang, Xiaohang Li (2024). Integration of low-thermal-budget In2O3 NMOS inverter and GaN HEMT for power electronics . Applied Physics Letters.
(2024). Advancing Neutron Detection: Fabrication, Characterization, and Performance Evaluation of Self-Powered PIN BGaN/GaN Superlattice-Based Neutron Detectors . physica status solidi (a).
(2024). Enhancement-Mode Ambipolar Thin-Film Transistors and CMOS Logic Circuits using Bilayer Ga<sub>2</sub>O<sub>3</sub>/NiO Semiconductors . ACS Applied Materials & Interfaces.
(2024). Pseudo-source gated beta-gallium oxide MOSFET . Applied Physics Letters.
(2024). High-temperature operation of Al2O3/Ga2O3 bi-layer gate stack GaN MOS-HEMT up to 450 °C with suppressed gate leakage . Japanese Journal of Applied Physics.
(2024). Three-dimensional integrated metal-oxide transistors . Nature Electronics.
(2024). Integration of low-thermal-budget In2O3 NMOS inverter and GaN HEMT for power electronics . Applied Physics Letters.
(2024). Demonstration of normally OFF beta-gallium oxide monolithic bidirectional switch for AC switching applications . Applied Physics Letters.
(2024). Demonstration of aluminum nitride metal oxide semiconductor field effect transistor on sapphire substrate . Journal of Physics D: Applied Physics.
Mritunjay Kumar, Jose Manuel Taboada Vasquez, Aasim Ashai, Yi Lu, Vishal Khandelwal, Manoj Rajbhar, Xiaohang Li, Biplab Sarkar(2023). A self-powered and broadband UV PIN photodiode employing a NiOx layer and a β-Ga<sub>2</sub>O<sub>3</sub> heterojunction . Journal of Physics D: Applied Physics. 56. (6). p. 065104. {IOP} Publishing
(2023). A self-powered and broadband UV PIN photodiode employing a NiOx layer and a β-Ga2O3 heterojunction . Journal of Physics D: Applied Physics.
(2022). Transferable Ga2O3 Membrane for Vertical and Flexible Electronics via One-Step Exfoliation . ACS Applied Materials & Interfaces.
(2021). Natural Boron and 10B-Enriched Hexagonal Boron Nitride for High-Sensitivity Self-Biased Metal–Semiconductor–Metal Neutron Detectors . ACS Omega.