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Hire Dr. Emmanuel I.

South Africa

USD 50 /hr

Freelance Statistics, computational physics and materials science modelling and simulation expert for R&D.

Profile Summary

Emmanuel Igumbor interest is in computational modelling in Physics, Chemistry and Material Engineering. He is currently investigating transport, migration, optical, thermodynamics, charge state, vibrational properties of 2D and 3D materials: semiconductors, complex materials, graphene, rare-earth topological insulators, high pressure and transition metal dichalcogenides. Emmanuel has vast experience in ab initio study of point defects in Ge using hybrid functional, study of intrinsic defect and their electronic, optical, electrical and transport properties of BN, MoS2, CrS2, TiS3, graphene, and predicting the electrically active induced energy levels and metastability of defects in 4H SiC. Emmanuel is also a freelancer, he helps to review scientific manuscript for content and scientific improvement, for researchers and companies before publication or presentations. Emmanuel is also a trained statistician, with more than 15+ years experience in handling data. He has analyzed several postgraduate research related data for thesis and article publication.

Subject Matter Expertise

• ★ Peer Review
• ☆ Materials Science & Engineering
• ☆ Biostatistics
• ☆ Biomedical Engineering
• ☆ Mechanical Engineering
• ☆ Computational Fluid Dynamics
• ☆ Statistical Computing
• ☆ Statistical Review
• ☆ Medical Statistics
• ☆ Physics
• ☆ Applied Mechanics
• ☆ Computational Physics
• ☆ Renewable Energy
• ☆ Book Reviews
• ☆ Research
• ☆ Research Methodology
• ☆ Systematic Literature Review

Services

• Writing
• Research
• Consulting
• Data & AI
• Product Development

Writing Technical Writing

Research Market Research, User Research, Feasibility Study, Technology Scouting, Fact Checking, Gap Analysis

Consulting Digital Strategy Consulting, Healthcare Consulting, Scientific and Technical Consulting

Data & AI Statistical Analysis, Big Data Analytics

Product Development Formulation

Work Experience

Research Fellow

University of Johannesburg

July 2021 - Present

Research Fellow

University of South Africa

July 2018 - Present

Postdoctoral Fellow

University of Pretoria

February 2017 - June 2018

Lecturer

University of Pretoria

February 2016 - November 2016

Research and Teaching Assistant

University of Pretoria

April 2014 - November 2015

Lecturer

Samuel Adegboyega University

November 2011 - March 2014

Education

PhD (Physics)

University of Pretoria

January 2014 - December 2016

MSc (Theoretical Physics) (Mathematics and Applied Physics)

African University of Science and Technology

June 2009 - December 2009

BSc (Mathematics and Statistics)

University of Port Harcourt

January 2001 - November 2005

Certifications

• Certification details not provided.

Publications

JOURNAL ARTICLE

Igumbor, E., Olaniyan, O., Dongho-Nguimdo, G.M., Mapasha, R.E., Ahmad, S., Omotoso, E., Meyer, W.E.(2022). Electronic properties and defect levels induced by n/p-type defect-complexes in Ge . Materials Science in Semiconductor Processing. 150.

Omotoso, E., Meyer, W.E., Igumbor, E., Hlatshwayo, T.T., Prinsloo, A.R.E., Auret, F.D., Sheppard, C.J.(2022). DLTS study of the influence of annealing on deep level defects induced in xenon ions implanted n-type 4H-SiC . Journal of Materials Science: Materials in Electronics. 33. (19). p. 15679-15688.

Omotoso, E., Paradzah, A.T., Igumbor, E., Taleatu, B.A., Meyer, W.E., Auret, F.D.(2020). Determination of capture barrier energy of the E-center in palladium Schottky barrier diodes of antimony-doped germanium by varying the pulse width . Materials Research Express. 7. (2).

Igumbor, E., Dongho-Nguimdo, G.M., Mapasha, R.E., Omotoso, E., Meyer, W.E.(2020). Stability, electronic and defect levels induced by substitution of Al and P pair in 4H–SiC . Journal of Physics and Chemistry of Solids. 142.

Olaniyan, O., Moskaleva, L., Mahadi, R., Igumbor, E., Bello, A.(2020). Tuning the electronic structure and thermodynamic properties of hybrid graphene-hexagonal boron nitride monolayer . FlatChem. 24.

E. Igumbor, H.T. Danga, E. Omotoso, W.E. Meyer(2019). Defect levels induced by double substitution of B and N in 4H-SiC . Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 442. p. 41--46. Elsevier {BV}

H.T. Danga, S.M. Tunhuma, F.D. Auret, E. Igumbor, E. Omotoso, W.E. Meyer(2019). The study of low temperature irradiation induced defects in p-Si using deep-level transient spectroscopy . Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 442. p. 28--30. Elsevier {BV}

O. Olaniyan, E. Igumbor, A. A. Khaleed, A. A. Mirghni, N. Manyala(2019). Ab-initio study of the optical properties of beryllium-sulphur co-doped graphene . AIP Advances. 9. (2). p. 025221. {AIP} Publishing

E. Igumbor, O. Olaniyan, R.E. Mapasha, H.T. Danga, E. Omotoso, W.E. Meyer(2019). Induced defect levels of P and Al vacancy-complexes in 4H-SiC: A hybrid functional study . Materials Science in Semiconductor Processing. 89. p. 77--84. Elsevier {BV}

Igumbor, E., Olaniyan, O., Mapasha, R.E., Danga, H.T., Omotoso, E., Meyer, W.E.(2019). Induced defect levels of P and Al vacancy-complexes in 4H-SiC: A hybrid functional study . Materials Science in Semiconductor Processing. 89. p. 77-84.

Igumbor, E., Olaniyan, O., Mapasha, R. E., Danga, H. T., Omotoso, E., Meyer, W. E. (2019). Induced defect levels of P and Al vacancy-complexes in 4 H-SiC: A hybrid functional study . Materials Science in Semiconductor Processing.

Gora, V.E., Auret, F.D., Danga, H.T., Tunhuma, S.M., Nyamhere, C., Igumbor, E., Chawanda, A.(2019). Barrier height inhomogeneities on Pd/n-4H-SiC Schottky diodes in a wide temperature range . Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 247.

Igumbor, E., Dongho-Nguimdo, G.M., Mapasha, R.E., Meyer, W.E.(2019). Electronic properties and defect levels induced by group III substitution–interstitial complexes in Ge . Journal of Materials Science. 54. (15). p. 10798-10808.

Mapasha, R.E., Igumbor, E., Andriambelaza, N.F., Chetty, N.(2019). Electronic properties of vacancies in bilayer graphane . Physica B: Condensed Matter. 573. p. 67-71.

Dongho-Nguimdo, G.M., Igumbor, E., Zambou, S., Joubert, D.P.(2019). First principles prediction of the solar cell efficiency of chalcopyrite materials AgMX <inf>2</inf> (M=In, Al; X=S, Se, Te) . Computational Condensed Matter. 21.

Olaniyan, O., Igumbor, E., Khaleed, A.A., Mirghni, A.A., Manyala, N.(2019). Ab-initio study of the optical properties of beryllium-sulphur co-doped graphene . AIP Advances. 9. (2).

Danga, H.T., Tunhuma, S.M., Auret, F.D., Igumbor, E., Omotoso, E., Meyer, W.E.(2019). The study of low temperature irradiation induced defects in p-Si using deep-level transient spectroscopy . Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 442. p. 28-30.

Igumbor, E., Danga, H.T., Omotoso, E., Meyer, W.E.(2019). Defect levels induced by double substitution of B and N in 4H-SiC . Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 442. p. 41-46.

O. Olaniyan, R.E. Maphasha, M.J. Madito, A.A. Khaleed, E. Igumbor, N. Manyala(2018). A systematic study of the stability, electronic and optical properties of beryllium and nitrogen co-doped graphene . Carbon. 129. p. 207--227. Elsevier {BV}

Olaniyan, O., Maphasha, R.E., Madito, M.J., Khaleed, A.A., Igumbor, E., Manyala, N.(2018). A systematic study of the stability, electronic and optical properties of beryllium and nitrogen co-doped graphene . Carbon. 129. p. 207-227.

Olaniyan, O., Maphasha, R. E., Madito, M. J., Khaleed, A. A., Igumbor, E., Manyala, N. (2018). A systematic study of the stability, electronic and optical properties of beryllium and nitrogen co-doped graphene . Carbon.

Igumbor, E., Mapasha, R.E., Meyer, W.E.(2018). Density functional theory calculation of monolayer WTe<inf>2</inf> transition metal dichalcogenides doped with H, Li and Be . Physica B: Condensed Matter. 535. p. 167-170.

Igumbor, E., Mapasha, R. E., Meyer, W. E. (2018). Density functional theory calculation of monolayer WTe2 transition metal dichalcogenides doped with H, Li and Be . Physica B: Condensed Matter.

Omotoso, E., Paradzah, A.T., Janse van Rensburg, P.J., Legodi, M.J., Auret, F.D., Igumbor, E., Danga, H.T., Diale, M., Meyer, W.E.(2018). Electrical characterisation of deep level defects created by bombarding the n-type 4H-SiC with 1.8 MeV protons . Surface and Coatings Technology. 355. p. 2-6.

Danga, H.T., Auret, F.D., Tunhuma, S.M., Omotoso, E., Igumbor, E., Meyer, W.E.(2018). Electrically active defects in p-type silicon after alpha-particle irradiation . Physica B: Condensed Matter. 535. p. 99-101.

Igumbor, E., Olaniyan, O., Mapasha, R.E., Danga, H.T., Omotoso, E., Meyer, W.E.(2018). Electrically active induced energy levels and metastability of B and N vacancy-complexes in 4H-SiC . Journal of Physics Condensed Matter. 30. (18).

Igumbor, Emmanuel, Danga, Helga T., Auret, F. Danie, Tunhuma, Shandirai M., Omotoso, Ezekiel, Meyer, Walter E. (2018). Electrically active defects in p-type silicon after alpha-particle irradiation . Physica B: Condensed Matter.

Igumbor, E., Olaniyan, O., Mapasha, R. E., Danga, H. T., Omotoso, E., Meyer, W. E. (2018). Electrically active induced energy levels and metastability of B and N vacancy-complexes in 4H-SiC . Journal of Physics: Condensed Matter.

Mapasha, R.E., Igumbor, E., Andriambelaza, N.F., Chetty, N.(2018). Electronic properties of B and Al doped graphane: A hybrid density functional study . Physica B: Condensed Matter. 535. p. 287-292.

Mapasha, R. E., Igumbor, E., Andriambelaza, N. F., Chetty, N. (2018). Electronic properties of B and Al doped graphane: A hybrid density functional study . Physica B: Condensed Matter.

Omotoso, E., Auret, F.D., Igumbor, E., Tunhuma, S.M., Danga, H.T., Ngoepe, P.N.M., Taleatu, B.A., Meyer, W.E.(2018). The influence of thermal annealing on the characteristics of Au/Ni Schottky contacts on n-type 4H-SiC . Applied Physics A: Materials Science and Processing. 124. (5).

Omotoso, E., Auret, F. D., Igumbor, E., Tunhuma, S. M., Danga, H. T., Ngoepe, P. N. M., Taleatu, B. A., Meyer, W. E. (2018). The influence of thermal annealing on the characteristics of Au/Ni Schottky contacts on n-type 4H-SiC . Applied Physics A Solids and Surfaces.

Emmanuel Igumbor, Ezekiel Omotoso, Walter Ernst Meyer(2017). <i>Ab Initio</i> Study of MgTe Self-Interstitial (Mg_i and Te_i): A Wide Band Gap Semiconductor . Nano Hybrids and Composites. 16. p. 47--51. Trans Tech Publications

Igumbor, Emmanuel, Omotoso, Ezekiel, Meyer, Walter Ernst (2017). Ab Initio Study of MgTe Self-Interstitial (Mg-i and Te-i): A Wide Band Gap Semiconductor . Nano Hybrids and Composites.

Igumbor, E., Mapasha, R.E., Meyer, W.E.(2017). Ab Initio Study of Aluminium Impurity and Interstitial-Substitutional Complexes in Ge Using a Hybrid Functional (HSE) . Journal of Electronic Materials. 46. (7). p. 3880-3887.

Igumbor, E., Mapasha, R. E., Meyer, W. E. (2017). Ab Initio Study of Aluminium Impurity and Interstitial-Substitutional Complexes in Ge Using a Hybrid Functional (HSE) . Journal of Electronic Materials.

Tunhuma, S.M., Auret, F.D., Nel, J.M., Omotoso, E., Danga, H.T., Igumbor, E., Diale, M.(2017). Electrical characterization of defects induced by electron beam exposure in low doped n-GaAs . Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 409. p. 36-40.

Tunhuma, S. M., Auret, F. D., Nel, J. M., Omotoso, E., Danga, H. T., Igumbor, E., Diale, M. (2017). Electrical characterization of defects induced by electron beam exposure in low doped n-GaAs . Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.

Igumbor, E., Andrew, R.C., Meyer, W.E.(2017). Rare Earth Interstitials in Ge: A Hybrid Density Functional Theory Study . Journal of Electronic Materials. 46. (2). p. 1022-1029.

Igumbor, E., Andrew, R. C., Meyer, W. E. (2017). Rare Earth Interstitials in Ge: A Hybrid Density Functional Theory Study . Journal of Electronic Materials.

Igumbor, E., Omotoso, E., Danga, H.T., Tunhuma, S.M., Meyer, W.E.(2017). Rare earth interstitial-complexes in Ge: Hybrid density functional studies . Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 409. p. 9-13.

Igumbor, E., Omotoso, E., Tunhuma, S.M., Danga, H.T., Meyer, W.E.(2017). Rare earth substitutional impurities in germanium: A hybrid density functional theory study . Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 409. p. 31-35.

Igumbor, E., Omotoso, E., Tunhuma, S. M., Danga, H. T., Meyer, W. E. (2017). Rare earth substitutional impurities in germanium: A hybrid density functional theory study . Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.

Omotoso, E., Meyer, W.E., van Rensburg, P.J.J., Igumbor, E., Tunhuma, S.M., Ngoepe, P.N.M., Danga, H.T., Auret, F.D.(2017). The effects of high-energy proton irradiation on the electrical characteristics of Au/Ni/4H-SiC Schottky barrier diodes . Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 409. p. 241-245.

Igumbor, E., Omotoso, E., Danga, H. T., Tunhuma, S. M., Meyer, W. E. (2017). Rare earth interstitial-complexes in Ge: Hybrid density functional studies . Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.

Omotoso, E., Meyer, W. E., van Rensburg, P. J. Janse, Igumbor, E., Tunhuma, S. M., Ngoepe, P. N. M., Danga, H. T., Auret, F. D. (2017). The effects of high-energy proton irradiation on the electrical characteristics of Au/Ni/4H-SiC Schottky barrier diodes . Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.

Danga, H.T., Auret, F.D., Tunhuma, S.M., Omotoso, E., Igumbor, E., Meyer, W.E.(2017). Thermal stability of defects introduced by electron beam deposition in p-type silicon . Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 409. p. 46-49.

Danga, H. T., Auret, F. D., Tunhuma, S. M., Omotoso, E., Igumbor, E., Meyer, W. E. (2017). Thermal stability of defects introduced by p-type silicon electron beam deposition in . Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.

Igumbor, E., Mapasha, R.E., Andrew, R., Meyer, W.E.(2016). A first principle hybrid functional calculation of Tm<inf>Ge</inf>³⁺-V<inf>Ge</inf> defect complexes in germanium . Computational Condensed Matter. 8. p. 31-35.

Igumbor, E., Mapasha, R. E., Andrew, Richard, Meyer, W. E. (2016). A first principle hybrid functional calculation of Tm-Ge(3+)-V-Ge defect complexes in germanium . Computational Condensed Matter.

Mapasha, R. E., Igumbor, E., Chetty, N. (2016). A hybrid density functional study of silicon and phosphorus doped hexagonal boron nitride monolayer . Journal of Physics: Conference Series.

Igumbor, E., Meyer, W.E.(2016). A hybrid functional calculation of Tm³⁺ defects in germanium (Ge) . Materials Science in Semiconductor Processing. 43. p. 129-133.

Igumbor, E., Meyer, W. E. (2016). A hybrid functional calculation of Tm3+ defects in germanium (Ge) . Materials Science in Semiconductor Processing.

Igumbor, E., Ouma, C.N.M., Webb, G., Meyer, W.E.(2016). Ab-initio study of germanium di-interstitial using a hybrid functional (HSE) . Physica B: Condensed Matter. 480. p. 191-195.

Igumbor, E., Ouma, C. N. M., Webb, G., Meyer, W. E. (2016). Ab-initio study of germanium di-interstitial using a hybrid functional (HSE) . Physica B: Condensed Matter.

Dzade, N.Y., Obodo, K.O., Adjokatse, S.K., Ashu, A.C., Amankwah, E., Atiso, C.D., Bello, A.A., Igumbor, E., Nzabarinda, S.B., Obodo, J.T., et al.(2010). Silicene and transition metal based materials: Prediction of a two-dimensional piezomagnet . Journal of Physics Condensed Matter. 22. (37).

Igumbor, Emmanuel, Dzade, Nelson Y., Obodo, Kingsley O., Adjokatse, Sampson K., Ashu, Akosa C., Amankwah, Emmanuel, Atiso, Clement D., Bello, Abdulhakeem A., Nzabarinda, Stany B., Obodo, Joshua T., et al. (2010). Silicene and transition metal based materials: prediction of a two-dimensional piezomagnet . Journal of Physics: Condensed Matter.

CONFERENCE PAPER

Danga, H.T., Auret, F.D., Tunhuma, S.M., Omotoso, E., Igumbor, E., Meyer, W.E.(2019). Electrical characterization of electron beam exposure induced defects in epitaxially grown n-type silicon . AIP Conference Proceedings. 2109.

Mapasha, R.E., Igumbor, E., Chetty, N.(2016). A hybrid density functional study of silicon and phosphorus doped hexagonal boron nitride monolayer . Journal of Physics: Conference Series. 759. (1).

OTHER

Dongho-Nguimdo, G., Igumbor, E., Zambou, S., Joubert, D.P.(2019). First principles prediction of the solar cell efficiency of chalcopyrite materials AgMX₂ (M=In,Al; X=S, Se,Te) . arXiv.

BOOK

Igumbor, E., Obodo, K., Meyer, W.E.(2016). Ab-initio study of MgSe self-interstitial (Mg<inf>i</inf> and Se<inf>i</inf>) . Solid State Phenomena. 242. p. 440-446.