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Hire Dr. Panagiotis B.
Greece
Profile Summary
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Subject Matter Expertise
Services
Writing Technical Writing, Newswriting
Research Market Research, User Research, Meta-Research, Feasibility Study, Fact Checking, Gap Analysis, Gray Literature Search, Systematic Literature Review, Secondary Data Collection
Consulting Scientific and Technical Consulting
Data & AI Statistical Analysis, Data Visualization, Big Data Analytics, Data Processing, Data Insights
Product Development Formulation, Product Evaluation, Concept Development
Work Experience

Postdoctroral Researcher

National Technical University of Athens

October 2018 - Present

Education

PhD - Physics

National Technical University of Athens

September 2012 - August 2017

Certifications
Publications
JOURNAL ARTICLE
Panagiotis Bousoulas, Marianthi Panagopoulou, Nikos Boukos, Dimitris Tsoukalas(2021). Emulating artificial neuron and synaptic properties with SiO2-based memristive devices by tuning threshold and bipolar switching effects . Journal of Physics D: Applied Physics. {IOP} Publishing
P. Bousoulas, D. Sakellaropoulos, D. Tsoukalas (2021). Tuning the analog synaptic properties of forming free SiO2 memristors by material engineering . Applied Physics Letters.
Panagiotis Bousoulas, Dionisis Sakellaropoulos, Charalampos Papakonstantinopoulos, Stavros Kitsios, Dimitris Tsoukalas(2021). Impact of Active Electrode on the Synaptic Properties of SiO2-Based Forming-Free Conductive Bridge Memory . IEEE Transactions on Electron Devices. 68. (4). p. 1598--1603. Institute of Electrical and Electronics Engineers ({IEEE})
Panagiotis Bousoulas, Charalampos Papakonstantinopoulos, Stavros Kitsios, Konstantinos Moustakas, Georgios Ch. Sirakoulis, Dimitris Tsoukalas(2021). Emulating Artificial Synaptic Plasticity Characteristics from SiO2-Based Conductive Bridge Memories with Pt Nanoparticles . Micromachines. 12. (3). p. 306. {MDPI} {AG}
Panagiotis Bousoulas, Charalampos Papakonstantinopoulos, Stavros Kitsios, Konstantinos Moustakas, Georgios Ch. Sirakoulis, Dimitris Tsoukalas (2021). Emulating Artificial Synaptic Plasticity Characteristics from SiO<sub>2</sub>-Based Conductive Bridge Memories with Pt Nanoparticles . Micromachines.
Panagiotis Bousoulas, Dionisis Sakellaropoulos, Charalampos Papakonstantinopoulos, Stavros Kitsios, Chris Arvanitis, Emmanouil Bagakis, Dimitris Tsoukalas(2020). Investigating the origins of ultra-short relaxation times of silver filaments in forming-free SiO2-based conductive bridge memristors . Nanotechnology. 31. (45). p. 454002. {IOP} Publishing
Panagiotis Bousoulas, Dionisis Sakellaropoulos, Charalampos Papakonstantinopoulos, Stavros Kitsios, Dimitris Tsoukalas(2020). Spatial Confinement Effects of Embedded Nanocrystals on Multibit and Synaptic Properties of Forming Free SiO2-Based Conductive Bridge Random Access Memory . IEEE Electron Device Letters. p. 1--1. Institute of Electrical and Electronics Engineers ({IEEE})
D. Sakellaropoulos, P. Bousoulas, D. Tsoukalas(2019). Impact of Pt embedded nanocrystals on the resistive switching and synaptic properties of forming free TiO2 – x/TiO2 – y-based bilayer structures . Journal of Applied Physics. 126. (4). p. 044501. {AIP} Publishing
Panagiotis Bousoulas, Ismini Karageorgiou, Vaggelis Aslanidis, Kostas Giannakopoulos, Dimitris Tsoukalas(2018). Tuning Resistive, Capacitive, and Synaptic Properties of Forming Free TiO2-x -Based RRAM Devices by Embedded Pt and Ta Nanocrystals . physica status solidi (a). p. 1700440. Wiley-Blackwell
Panagiotis Bousoulas, Irini Michelakaki, Evangelos Skotadis, Menelaos Tsigkourakos, Dimitris Tsoukalas(2017). Low-Power Forming Free TiO2–<italic>x</italic>/HfO2–<italic>y</italic>/TiO2–<italic>x</italic>-Trilayer RRAM Devices Exhibiting Synaptic Property Characteristics . IEEE Transactions on Electron Devices. p. 1--8. Institute of Electrical and Electronics Engineers ({IEEE})
Bousoulas, P., Giannopoulos, I., Asenov, P., Karageorgiou, I., Tsoukalas, D.(2017). Investigating the origins of high multilevel resistive switching in forming free Ti/TiO<inf>2−x</inf>-based memory devices through experiments and simulations . Journal of Applied Physics. 121. (9).
Bousoulas, P., Michelakaki, I., Skotadis, E., Tsigkourakos, M., Tsoukalas, D.(2017). Low-Power Forming Free TiO2-x/HfO2-y/TiO2-x-Trilayer RRAM Devices Exhibiting Synaptic Property Characteristics . IEEE Transactions on Electron Devices.
Michelakaki, I., Bousoulas, P., Stathopoulos, S., Boukos, N., Tsoukalas, D.(2017). Coexistence of bipolar and threshold resistive switching in TiO<inf>2</inf> based structure with embedded hafnium nanoparticles . Journal of Physics D: Applied Physics. 50. (4).
Skotadis, E., Tsekenis, G., Chatzipetrou, M., Patsiouras, L., Madianos, L., Bousoulas, P., Zergioti, I., Tsoukalas, D.(2017). Heavy metal ion detection using DNAzyme-modified platinum nanoparticle networks . Sensors and Actuators, B: Chemical. 239. p. 962-969.
Michelakaki, I., Bousoulas, P., Maragos, N., Boukos, N., Tsoukalas, D.(2017). Resistive memory multilayer structure with self-rectifying and forming free properties along with their modification by adding a hafnium nanoparticle midlayer . Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 35. (2).
Bousoulas, P., Asenov, P., Karageorgiou, I., Sakellaropoulos, D., Stathopoulos, S., Tsoukalas, D.(2016). Engineering amorphous-crystalline interfaces in TiO<inf>2-x</inf>/TiO<inf>2-y</inf>-based bilayer structures for enhanced resistive switching and synaptic properties . Journal of Applied Physics. 120. (15).
Bousoulas, P., Tsoukalas, D.(2016). Understanding the Formation of Conducting Filaments in RRAM Through the Design of Experiments . International Journal of High Speed Electronics and Systems. 25. (1-2).
Bousoulas, P., Stathopoulos, S., Tsialoukis, D., Tsoukalas, D.(2016). Low-Power and Highly Uniform 3-b Multilevel Switching in Forming Free TiO<inf>2-x</inf>-Based RRAM with Embedded Pt Nanocrystals . IEEE Electron Device Letters. 37. (7). p. 874-877.
Bousoulas, P., Giannopoulos, J., Giannakopoulos, K., Dimitrakis, P., Tsoukalas, D.(2015). Memory programming of TiO<inf>2-x</inf> films by Conductive Atomic Force Microscopy evidencing filamentary resistive switching . Applied Surface Science. 332. p. 55-61.
Bousoulas, P., Michelakaki, I., Tsoukalas, D.(2014). Influence of Ti top electrode thickness on the resistive switching properties of forming free and self-rectified TiO2 - X thin films . Thin Solid Films. 571. (P1). p. 23-31.
Bousoulas, P., Michelakaki, I., Tsoukalas, D.(2014). Influence of oxygen content of room temperature TiO<inf>2-x</inf> deposited films for enhanced resistive switching memory performance . Journal of Applied Physics. 115. (3).
CONFERENCE PAPER
Bousoulas, P., Asenov, P., Tsoukalas, D.(2016). Physical modelling of the SET/RESET characteristics and analog properties of TiO<inf>x</inf>/HfO<inf>2-x</inf>/TiO<inf>x</inf>-based RRAM devices . International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. p. 249-252.
Giannakopoulos, K., Giannopoulos, J., Bousoulas, P., Verrelli, E., Tsoukalas, D.(2015). Structural characterization of layers for advanced non-volatile memories . Springer Proceedings in Physics. 164. p. 9-17.
Bousoulas, P., Michelakaki, I., Giannopoulos, J., Giannakopoulos, K., Tsoukalas, D.(2015). Material and device parameters influencing multi-level resistive switching of room temperature grown titanium oxide layers . Materials Research Society Symposium Proceedings. 1729. p. 59-64.
Bousoulas, P., Sakellaropoulos, D., Giannopoulos, J., Tsoukalas, D.(2015). Improving the resistive switching uniformity of forming-free TiO<inf>2-x</inf> based devices by embedded Pt nanocrystals . European Solid-State Device Research Conference. 2015-November. p. 274-277.