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Profile Details
Contact
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USD 165 /hr
Hire Michael Haverty
United States
USD 165 /hr
Profile Summary
Subject Matter Expertise
Services
Work Experience

President

Property Vectors

June 2017 - Present

Vice President of Science

Exabyte.io

May 2016 - June 2017

Senior Research Scientist

Intel Corporation

July 2001 - May 2016

Education

Master's (Materials Science and Engineering)

Stanford University

September 1999 - June 2001

Bachelor's of Science (Computer Science)

Johns Hopkins University

September 1994 - May 1999

Bachelor's (Materials Science and Engineering)

Johns Hopkins University

September 1994 - May 1999

Bachelor of Science and Engineering in Computer Science

Johns Hopkins University, Baltimore, MD, USA

September 1994 - May 1999

Bachelor of Science and Engineering in Materials Science and Engineering

Johns Hopkins University, Baltimore, MD, USA

September 1994 - May 1998

Certifications
  • Certification details not provided.
Publications
OTHER
Haverty, Michael G and Shankar, Sadasivan and Ghani, Tahir and Park, Seongjun(2017). Semiconductor device contacts.
Haverty, Michael G and Shankar, Sadasivan and Ghani, Tahir and Park, Seongjun(2017). Semiconductor device contacts.
Haverty, Michael G and Shankar, Sadasivan and Ghani, Tahir and Park, Seongjun(2015). Semiconductor device contacts. Google Patents
Simka, Harsono S and Zierath, Daniel J and Haverty, Michael G and Shankar, Sadasivan(2014). Liner layers for metal interconnects. Google Patents
Haverty, Michael G and Shankar, Sadasivan(2014). Transistor channel mobility using alternate gate dielectric materials. Google Patents
Shankar, Sadasivan and Bohr, Mark and Haverty, Michael(2013). Composite materials for use in semiconductor components. Google Patents
Shah, Kunal and Haverty, Michael and Shankar, Sadasivan and Ingerly, Doug and Kloster, Grant(2012). Polymer interlayer dielectric and passivation materials for a microelectronic device. Google Patents
Cea, Stephen M and Weber, Cory E and Keys, Patrick H and Kim, Seiyon and Haverty, Michael G and Shankar, Sadasivan(2011). Nanowire structures having wrap-around contacts. Google Patents
Simka, Harsono and Shankar, Sadasivan and Haverty, Michael and Chebiam, Ramanan and Gstrein, Florian(2007). Metal interconnect structures for semiconductor devices. Google Patents
Haverty, Michael and Shankar, Sadasivan and Park, Seongjun(2007). Reducing resistivity in metal interconnects using interface control. Google Patents
Haverty, Michael and Shankar, Sadasivan and O'brien, Kevin and Park, Seongjun(2007). Reducing resistivity in metal interconnects by compressive straining. Google Patents
Haverty, Michael and Chen, Tim and Shankar, Sadasivan(2006). Dielectric material having carborane derivatives. Google Patents
Haverty, Michael G and Ravi, KV and Shankar, Sadasivan(2006). Bond termination of pores in a porous diamond dielectric material. Google Patents
Haverty, Michael and Kloster, Grant and Shankar, Sadasivan and Boyanov, Boyan and Goodner, Michael and Moinpour, Mansour(2005). Methods of internal stress reduction in dielectric films with chemical incorporation and structures formed thereby. Google Patents
Kloster, Grant and Boyanov, Boyan and Goodner, Michael and Moinpour, Mansour and Haverty, Michael(2005). Reducing internal film stress in dielectric film. Google Patents
Goodner, Michael and McSwiney, Michael and Kloster, Grant and Shankar, Sadasivan and Haverty, Michael(2004). Electronic devices with molecular sieve layers. Google Patents
Haverty, Michael and Chen, Tim and Shankar, Sadasivan(2004). Dielectric material having carborane derivatives. Google Patents
Kloster, Grant and Leu, Jihperng and Goodner, Michael and Haverty, Michael and Shankar, Sadasivan(2004). Porous ceramic materials as low-k films in semiconductor devices. Google Patents
JOURNAL ARTICLE
Kong, Chang Sun and Haverty, Michael and Simka, Harsono and Shankar, Sadasivan and Rajan, Krishna(2017). A fast hybrid methodology based on machine learning, quantum methods, and experimental measurements for evaluating material properties. Modelling and Simulation in Materials Science and Engineering. 25. (6). p. 065014. IOP Publishing
Bajaj, Saurabh and Haverty, Michael G and Arr{\'o}yave, Raymundo and Shankar, Sadasivan(2015). Phase stability in nanoscale material systems: extension from bulk phase diagrams. Nanoscale. 7. (21). p. 9868--9877. The Royal Society of Chemistry
Greene-Diniz, Gabriel and Jones, Sarah LT and Fagas, Giorgos and Haverty, Michael and Lacambra, Carlos Martinez and Shankar, Sadasivan and Greer, James C(2014). Divacancies in carbon nanotubes and their influence on electron scattering. Journal of Physics: Condensed Matter. 26. (4). p. 045303. IOP Publishing
Jones, Sarah LT and Greene-Diniz, Gabriel and Haverty, Michael and Shankar, Sadasivan and Greer, James C(2014). Effect of structure on electronic properties of the iron-carbon nanotube interface. Chemical Physics Letters. 615. p. 11--15. Elsevier
Ansari, Lida and Feldman, Baruch and Fagas, Giorgos and Lacambra, Carlos Martinez and Haverty, Michael G and Kuhn, Kelin J and Shankar, Sadasivan and Greer, James C(2013). First principle-based analysis of single-walled carbon nanotube and silicon nanowire junctionless transistors. IEEE Transactions on Nanotechnology. 12. (6). p. 1075--1081. IEEE
M. Trueba, D. Gonzalez, I. Oca{\~n}a, M. R. Elizalde, J. M. Martinez-Esnaola, M. T. Hernandez, M. Haverty, G. Xu, and D. Pantuso(2012). Assessment of fracture and elastoplastic properties of thin and very thin films. AIP: STRESS INDUCED PHENOMENA AND RELIABILITY IN 3D MICROELECTRONICS. 1601. p. 158.
Feldman, Baruch and Park, Seongjun and Haverty, Michael and Shankar, Sadasivan and Dunham, Scott T(2010). Front Cover (Phys. Status Solidi B 7/2010). physica status solidi (b). 247. (7). Wiley Online Library
Feldman, Baruch and Park, Seongjun and Haverty, Michael and Shankar, Sadasivan and Dunham, Scott T(2010). Simulation of grain boundary effects on electronic transport in metals, and detailed causes of scattering. physica status solidi (b). 247. (7). p. 1791--1796. Wiley Online Library
Feldman, Baruch and Park, Seongjun and Haverty, Michael and Shankar, Sadasivan and Dunham, Scott T(2009). Grain boundary effects on electronic transport in metals. arXiv preprint arXiv:0908.2252.
Shankar, Sadasivan and Simka, Harsono and Haverty, Michael(2008). Density functional theory and beyond�opportunities for quantum methods in materials modeling semiconductor technology. Journal of Physics: Condensed Matter. 20. (6). p. 064232. IOP Publishing
Simka, Harsono and Shankar, Sadasivan and Duran, Carolyn and Haverty, Michael(2005). Fundamentals of Cu/barrier-layer adhesion in microelectronic processing. MRS Online Proceedings Library Archive. 863. Cambridge University Press
Haverty, Michael and Kawamoto, Atsushi and Cho, Kyeongjae and Dutton, Robert(2002). First-principles study of transition-metal aluminates as high-k gate dielectrics. Applied physics letters. 80. (15). p. 2669--2671. AIP
Haverty, Michael(2001). FIRST PRINCIPLES THEORETICAL STUDY OF THE ELECTRONIC PROPERTIES OF BULK TRANSITION METAL ALUMINATES AS HIGH-k GATE DIELECTRICS.
Haverty, Michael and Kawamoto, Atsushi and Jun, Gyuchang and Cho, Kyeongjae and Dutton, Robert(2001). Preliminary First Principles Study Of Hf and Zr Aluminates as Replacement High-k Dielectrics. MRS Online Proceedings Library Archive. 670. Cambridge University Press
CONFERENCE PAPER
Kaminski, Jakub and Ratsch, Christian and Shankar, Sadasivan(2014). A Computational Method for Materials Design of Interfaces. APS Meeting Abstracts.
Kuhn, Kelin J and Avci, Uygar and Cappellani, Annalisa and Giles, Martin D and Haverty, Michael and Kim, Seiyon and Kotlyar, Roza and Manipatruni, Sasikanth and Nikonov, Dmitri and Pawashe, Chytra and others(2012). The ultimate CMOS device and beyond. Electron Devices Meeting (IEDM), 2012 IEEE International. p. 8--1.
Larsson, Andreas and Fagas, G and Greer, James C and Martinez, C and Patterson, J and Nikonov, D and Park, S and Haverty, MG and Shankar, S(2008). Multi-Scale Simulation for Nanowires and Carbon Nanotubes. Intel European Research and Innovation Conference: 10/09/2008-12/09/2008.